Ceramics heater for semiconductor production system

ABSTRACT

For semiconductor manufacturing equipment a ceramic susceptor is made available in which the temperature uniformity in the surface of a wafer during heating operations is enhanced by keeping fluctuations in the shape of the susceptor—particularly in the outer diameter along the thickness at normal temperature—under control. The ceramic susceptor ( 1 ) for semiconductor manufacturing equipment has a resistive heating element ( 3 ) on a surface of or inside ceramic substrates ( 2   a ), ( 2   b ). The difference between the maximum outer diameter and minimum outer diameter along the thickness of the ceramic susceptor when not heating is 0.8% or less of the average diameter along the wafer-support side. A plasma electrode may be arranged on a surface of or inside the ceramic substrates ( 2   a ), ( 2   b ) of the ceramic susceptor ( 1 ). The ceramic substrates ( 2   a ), ( 2   b ) are preferably made of at least one selected from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide.

TECHNICAL FIELD

The present invention relates to ceramic susceptors used to hold andheat wafers in semiconductor manufacturing equipment in which specificprocesses are carried out on the wafers in the course of semiconductormanufacture.

BACKGROUND ART

Various structures have been proposed to date for ceramic susceptorsused in semiconductor manufacturing equipment. Japanese Examined Pat.App. Pub. No. H06-28258, for example, proposes a semiconductor waferheating device equipped with a ceramic susceptor that is installed in areaction chamber and has an embedded resistive heating element, and apillar-like support member that is provided on the surface of thesusceptor other than its wafer-heating face and forms a gastight sealbetween it and the chamber.

In order to reduce manufacturing costs, a transition to wafers of largerdiametric span—from 8-inch to 12-inch in outer diameter—is in progress,resulting in the diameter of the ceramic susceptor that holds the waferincreasing to 300 mm or more. At the same time, temperature uniformityof within ±1.0%, and preferably within ±0.5%, in the surface of thewafer heated by the ceramic susceptor is being called for.

To meet this demand for improved temperature uniformity, research hasfocused on improving the circuit pattern of the resistive heatingelement provided in the ceramic susceptor. Satisfying this need forimproved temperature uniformity in the wafer surface has, however,become increasingly difficult as the diameter of the ceramic susceptorhas increased.

Patent Reference 1

Japanese Examined Pat. App. Pub. No. H06-28258.

As described above, conventional efforts to improve temperatureuniformity have been directed to improving the circuit pattern of theresistive heating element in the ceramic susceptor in order to uniformlyheat the wafer-support side. As wafer diameter has increased in recentyears, however, it has become increasingly difficult to maintain therequired temperature uniformity across the wafer surface.

For example, the pattern of the resistive heating element formed on thesurface of or inside the ceramic susceptor is designed and arranged soas to uniformly heat the surface on which the wafer is supported. Theshape designed for the ceramic susceptor itself, on the other hand, iscreated on the assumption that thermal conduction along thecircumferential direction and heat radiation from the peripheral areaare uniform.

In the course of ceramic susceptor manufacture, the susceptor peripheryis machined to a specified outer diameter by a polishing operation,where a problem has been that the stipulated dimension is simply theaverage outer diameter. This has meant that along with the transition tolarger-diameter wafers, in practice irregularities in susceptor shapehave increased-which has included greater fluctuations in the outerdiameter of the ceramic susceptor-and such irregularities have become abarrier to improving the temperature uniformity in the surface of wafersprocessed on the susceptors.

DISCLOSURE OF INVENTION

An object of the present invention, in view of such circumstances todate, is for semiconductor manufacturing equipment to make available aceramic susceptor with which wafer-surface temperature uniformity isenhanced by keeping irregularities in the shape of the ceramicsusceptor—particularly fluctuations in outer diameter along thesusceptor thickness—under control.

To achieve this object the present invention affords for semiconductormanufacturing equipment a ceramic susceptor having a resistive heatingelement on a surface of or inside a ceramic substrate, the ceramicsusceptor characterized in that the difference between a maximum outerdiameter and a minimum outer diameter along the susceptor thickness is0.8% or less of the average outer diameter along the susceptorwafer-support side when not heating.

The ceramic substrates in the foregoing ceramic susceptor of the presentinvention for semiconductor manufacturing equipment are preferably madeof at least one a ceramic selected from aluminum nitride, siliconnitride, aluminum oxynitride, and silicon carbide.

Furthermore, the resistive heating element in the foregoing ceramicsusceptor of the present invention for semiconductor manufacturingequipment is preferably made of at least one metal selected fromtungsten, molybdenum, platinum, palladium, silver, nickel, and chrome.

Additionally a plasma electrode furthermore may be disposed on a surfaceof or inside the ceramic substrate for the foregoing ceramic susceptorof the present invention for semiconductor manufacturing equipment.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic sectional view illustrating one specific exampleof a ceramic susceptor according to the present invention; and

FIG. 2 is a schematic sectional view illustrating a separate specificexample of a ceramic susceptor according to the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Having studied the shape of the ceramic susceptor itself as a factorinhibiting improvement in temperature uniformity in the wafer surface,the present inventors focused on irregularity in the outer diameteralong the thickness of the ceramic susceptor. More specifically, thepresent inventors realized that whereas conventionally only the averageouter diameter of ceramic susceptors for semiconductor manufacturingequipment has been prescribed, the difference between the long and shortaxes if the susceptor has turned out elliptically shaped, andirregularity in the outer diameter along the thickness of the susceptororiginating in the perpendicularity of the circumferential surface ofthe susceptor, more than appreciably affect wafer surface temperatureuniformity.

In actual manufacture of ceramic susceptors, fluctuations in the outerdiameter along the thickness are liable to become large. Because heatradiation per unit area is constant, in that portion of the susceptorwhere the outer diameter is greater—i.e., the portion where theperipheral unit area is greater—the amount of radiant heat will belarger; conversely the amount of radiant heat will be smaller thatsusceptor portion where the outer diameter is smaller. The heatemanation being the smaller in the smaller outer diameter portion of theceramic susceptor and being the larger in the larger outer diameterportion produces temperature unevenness in susceptors, which ondiametrically larger ceramic susceptors has a pronounced effect thatcannot be overlooked.

In addressing this issue, the present inventors discovered that thetemperature uniformity of the wafer surface during the wafer-heatingprocess can be improved to ±1.0% or better by making the differencebetween a maximum outer diameter and minimum outer diameter of theceramic susceptor along the thickness when not heating (i.e., at normaltemperature) be 0.8% or less of the average outer diameter along thewafer-support side.

More specifically, letting D_(ave) be the average outer diameter of theceramic susceptor wafer-support side, and D_(max) and D_(min) be themaximum and minimum susceptor outer diameters along the thickness in anarbitrary plane, then the outer-diameter fluctuation parameter D_(p) isdefined as D_(p)=(D_(max−D) _(min))/D_(ave). By thus controllingouter-diameter fluctuation parameter D_(p) to 0.8% or less, thetemperature uniformity of the wafer surface can be brought within ±0.5%in ceramic susceptors whose thermal conductivity is 100 W/mK or more,and within ±1.0% in ceramic susceptors whose thermal conductivity is 10to 100 W/mK.

The specific structure of a ceramic susceptor according to the presentinvention is described next with reference to FIG. 1 and FIG. 2. Theceramic susceptor 1 shown in FIG. 1 has a resistive heating element 3with a predetermined circuit pattern provided on one surface of aceramic substrate 2 a, and a separate ceramic substrate 2 b bonded ontothe same surface of the ceramic substrate 2 a by means of an adhesivelayer 4 of glass or ceramic. Here, the circuit pattern of the resistiveheating element 3 is defined so that the line width and line intervalwill be, for example, 5 mm or less, more preferably 1 mm or less.

The ceramic susceptor 11 shown in FIG. 2 is furnished with an internalresistive heating element 13 and a plasma electrode 15. Morespecifically, a ceramic substrate 12 a having the resistive heatingelement 13 on one surface thereof and a ceramic substrate 12 b arebonded by an adhesive layer 14 a similarly as with the ceramic susceptorshown in FIG. 1. At the same time, a separate ceramic substrate 12 cprovided with a plasma electrode 15 is bonded to the other side of theceramic substrate 12 a by means of a glass or ceramic adhesive layer 14b.

It should be understood that instead of bonding respective ceramicsubstrates to manufacture the ceramic susceptors, the ceramic susceptorsshown in FIG. 1 and FIG. 2 can alternatively be manufactured bypreparing approximately 0.5 mm thick green sheets, print-coating aconductive paste in the circuit pattern of the resistive heating elementand/or plasma electrode on respective green sheets, laminating thesegreen sheets together with other green sheets as needed to achieve therequired thickness, and then simultaneously sintering the multiple greensheets to unite them.

EMBODIMENTS

Embodiment 1

A sintering additive and a binder were added to, and dispersed into andmixed with, aluminum nitride (AlN) powder using a ball mill. Afterdrying with a spray dryer, the powder blend was press-molded into 1-mmthick, 380-mm diameter disks. The molded disks were degreased in anon-oxidizing atmosphere at a temperature of 800° C., and then sinteredfor 4 hours at 1900° C., producing sintered AlN compacts. The thermalconductivity of the resulting AlN sinters was 170 W/mK. Thecircumferential surface of each sintered AlN compact was then polishedto an outer diameter of 300 mm to prepare two AlN substrates for aceramic susceptor.

A paste of tungsten powder and sintering additive kneaded together witha binder was then print-coated on the surface of one of these AlNsubstrates, forming the specific circuit pattern of the resistiveheating element. This AlN substrate was degreased in a non-oxidizingatmosphere at a temperature of 800° C. and then baked at 1700° C.,producing a tungsten resistive heating element. A paste of Y₂O₃ adhesiveagent kneaded with a binder was print-coated on the surface of theremaining AlN substrate, which was then degreased at 500° C. Theadhesive layer of this AlN substrate was then overlaid on the side ofthe AlN substrate on which the resistive heating element was formed, andthe substrates were bonded together by heating at 800° C., therebyproducing a ceramic susceptor of AlN.

The circumferential surface of the ceramic susceptor produced by bondingwas once more polished to yield a predetermined outer-diameterfluctuation parameter D_(p) at normal temperature. Having theconfiguration represented in FIG. 1, seven sample ceramic susceptors inwhich the outer-diameter fluctuation parameter D_(p) was varied asindicated in Table I were prepared as just described.

It will be understood that here the outer-diameter fluctuation parameterD_(p) is defined as D_(p)=(D_(max)−D_(min))/D_(ave), whereinrespectively D_(ave) represents the average outer diameter of theceramic susceptor wafer-support side, D_(max), the maximum outerdiameter along the thickness in an arbitrary plane; and D_(min), theminimum outer diameter along the thickness in the arbitrary plane(likewise in all of the embodiments hereinafter).

The temperature of each sample susceptor produced in this way was thenraised to 500° C. by flowing a current at a voltage of 200 V into theresistive heating element through two electrodes formed on the surfaceof the susceptor opposite the wafer-support side. At that time a 0.8-mmthick, 300-mm diameter silicon wafer was placed on the wafer-supportside of the ceramic susceptor, and the temperature distribution in thewafer surface was measured to find the temperature uniformity. Theresults obtained for each sample are set forth in Table I. TABLE IOuter-diameter fluctuation Temperature uniformity (%) Sample parameterD_(p) (%) of wafer surface at 500° C. 1 0.007 ±0.31 2 0.10 ±0.36 3 0.30±0.38 4 0.50 ±0.41 5 0.80 ±0.49 6* 0.90 ±0.55 7* 1.20 ±0.91Note:Samples marked with an asterisk (*) in the table are comparativeexamples.

As will be understood from the results set forth in Table I, in an AlNceramic susceptor, by making the difference between a maximum outerdiameter and minimum outer diameter along the thickness be 0.8% or lessof the average outer diameter of the wafer-support side, the wafersurface temperature uniformity while the wafer is heated can be broughtto within ±0.5%.

Embodiment 2

A sintering additive and a binder were added to, and dispersed into andmixed with, silicon nitride (Si₃N₄) powder using a ball mill. Afterdrying with a spray dryer, the powder blend was press-molded into 1-mmthick, 380-mm diameter disks. The molded disks were degreased in anon-oxidizing atmosphere at a temperature of 800° C., and then sinteredfor 4 hours at 1550° C., producing sintered Si₃N₄ compacts. The thermalconductivity of the resulting Si₃N₄ sinters was 20 W/mK. Thecircumferential surface of each sintered Si₃N₄ compact was then polishedto an outer diameter of 300 mm to prepare two Si₃N₄ substrates for aceramic susceptor.

A paste of tungsten powder and sintering additive kneaded together witha binder was then print-coated on the surface of one of these Si₃N₄substrates. This Si₃N₄ substrate was then degreased in a non-oxidizingatmosphere at a temperature of 800° C. and then baked at 1650° C.,producing a tungsten resistive heating element. A layer of SiO₂ adhesiveagent was formed on the surface of the remaining Si₃N₄ substrate, whichwas then degreased at 500° C. The adhesive layer of this Si₃N₄ substratewas then overlaid on the side of the Si₃N₄ substrate on which theresistive heating element was formed, and the substrates were bondedtogether by heating at 800° C., thereby producing a ceramic susceptor ofSi₃N₄.

The circumferential surface of the ceramic susceptor produced by bondingwas once more polished to yield a predetermined outer-diameterfluctuation parameter D_(p) at normal temperature. Having theconfiguration represented in FIG. 1, sample ceramic susceptors in whichthe outer-diameter fluctuation parameter D_(p) was varied as indicatedin Table II were prepared as just described.

The temperature of each sample susceptor produced in this way was thenraised to 500° C. by flowing a current at a voltage of 200 V into theresistive heating element through two electrodes formed on the surfaceof the susceptor opposite the wafer-support side. At that time thetemperature distribution in the surface of a 0.8-mm thick, 300-mmdiameter silicon wafer placed on the wafer-support side of the ceramicsusceptor was measured to find the temperature uniformity. The resultsobtained for each sample are set forth in Table II. TABLE IIOuter-diameter fluctuation Temperature uniformity (%) Sample parameterD_(p) (%) of wafer surface at 5000° C.  8 0.007 ±0.60  9 0.10 ±0.72 100.30 ±0.80 11 0.50 ±0.88 12 0.80 ±0.96 13* 0.90 ±1.20Note:Samples marked with an asterisk (*) in the table are comparativeexamples.

As will be understood from the results set forth in Table II, in aceramic susceptor of silicon nitride, in which the thermal conductivityis 20 W/mK, by making the difference between a maximum outer diameterand minimum outer diameter along the thickness be 0.8% or less of theaverage outer diameter of the wafer-support side, a sought-after wafersurface temperature uniformity of within ±1.0% can be gained.

Embodiment 3

A sintering additive and a binder were added to, and dispersed into andmixed with, aluminum oxynitride (AlON) powder using a ball mill. Afterdrying with a spray dryer, the powder blend was press-molded into 1-mmthick, 380-mm diameter disks. The molded disks were degreased in anon-oxidizing atmosphere at a temperature of 800° C., and then sinteredfor 4 hours at 1770° C., producing sintered AlON compacts. The thermalconductivity of the resulting AlON sinters was 20 W/mK. Thecircumferential surface of each sintered AlON compact was then polishedto an outer diameter of 300 mm to prepare two AlON substrates for aceramic susceptor.

A paste of tungsten powder and sintering additive kneaded together witha binder was then print-coated on the surface of one of these AlONsubstrates to form a predetermined circuit pattern for a heatingelement. This AlON substrate was then degreased in a non-oxidizingatmosphere at a temperature of 800° C. and baked at 1700° C., producinga tungsten resistive heating element. A paste of Y₂O₃ adhesive agentkneaded with a binder was print-coated on the surface of the remainingAlON substrate, which was then degreased at 500° C. The adhesive layerof this AlON substrate was then overlaid on the side of the AlONsubstrate on which the resistive heating element was formed, and thesubstrates were bonded together by heating at 800° C., thereby producinga ceramic susceptor of AlON.

The circumferential surface of the ceramic susceptor produced by bondingwas once more polished to yield a predetermined outer-diameterfluctuation parameter D_(p) at normal temperature. Having theconfiguration represented in FIG. 1, sample ceramic susceptors in whichthe outer-diameter fluctuation parameter D_(p) was varied as indicatedin Table III were prepared as just described above.

The temperature of each sample susceptor produced in this way was thenraised to 500° C. by flowing a current at a voltage of 200 V into theresistive heating element through two electrodes formed on the surfaceof the susceptor opposite the wafer-support side. At that time thetemperature distribution in the surface of a 0.8-mm thick, 300-mmdiameter silicon wafer placed on the wafer-support side of the ceramicsusceptor was measured to find the temperature uniformity. The resultsobtained for each sample are collectively set forth in Table III. TABLEIII Outer-diameter fluctuation Temperature uniformity (%) Sampleparameter D_(p) (%) of wafer surface at 500° C. 14 0.007 ±0.66 15 0.10±0.72 16 0.30 ±0.84 17 0.50 ±0.90 18 0.80 ±0.99 19* 0.90 ±1.18Note:Samples marked with an asterisk (*) in the table are comparativeexamples.

As will be understood from the results set forth in Table III, in aceramic susceptor of aluminum oxynitride, in which the thermalconductivity is 20 W/mK, by making the difference between a maximumouter diameter and minimum outer diameter along the thickness be 0.8% orless of the average outer diameter of the wafer-support side, asought-after temperature uniformity in the wafer surface of within ±1.0%can be gained.

Embodiment 4

Pairs of AlN substrates for a ceramic susceptor with a 300 mm outerdiameter were prepared from a sintered aluminum nitride material usingthe same method described in the first embodiment. When sample ceramicsusceptors were made using these AlN substrate pairs, the material ofthe resistive heating element formed on the surface of one AlN substratewas changed to Mo, to Pt, to Ag—Pd, and to Ni—Cr. Pastes of thesematerials were print-coated on one AlN substrate of each pair, and thesubstrates were fired within a non-oxidizing atmosphere.

A SiO₂ glass bonding agent was then coated over the surface of theremaining AlN substrate in each pair, which was degreased in anon-oxidizing atmosphere at 800° C. The adhesive glass layer of this AlNsubstrate was then overlaid on the side of the AlN substrate on whichthe resistive heating element was formed, and the substrate pairs werebonded together by heating at 800° C., producing ceramic susceptors ofAlN.

The circumferential surface of each sample ceramic susceptor obtainedwas once more polished to yield a predetermined outer-diameterfluctuation parameter D_(p) at normal temperature. Having theconfiguration represented in FIG. 1, sample ceramic susceptors in whichthe outer-diameter fluctuation parameter D_(p) was varied as indicatedin Table IV were prepared as just described.

The temperature of each sample susceptor produced in this way was thenraised to 500° C. by flowing a current at a voltage of 200 V into theresistive heating element through two electrodes formed on the surfaceof the susceptor opposite the wafer-support side. At that time thetemperature distribution in the surface of a 0.8-mm thick, 300-mmdiameter silicon wafer placed on the wafer-support side of the ceramicsusceptor was measured to find the temperature uniformity. The resultsobtained for each sample are collectively set forth in Table IV. TABLEIV Outer-diameter Temperature Resistive heating fluctuation uniformity(%) of wafer Sample element parameter D_(p) (%) surface at 500° C. 20 Mo0.007 ±0.29 21 Mo 0.10 ±0.34 22 Mo 0.30 ±0.38 23 Mo 0.50 ±0.41 24 Mo0.80 ±0.50 25* Mo 0.90 ±0.61 26 Pt 0.007 ±0.31 27 Pt 0.10 ±0.36 28 Pt0.30 ±0.39 29 Pt 0.50 ±0.43 30 Pt 0.80 ±0.49 31* Pt 0.90 ±0.62 32 Ag—Pd0.007 ±0.30 33 Ag—Pd 0.10 ±0.36 34 Ag—Pd 0.30 ±0.39 35 Ag—Pd 0.50 ±0.4136 Ag—Pd 0.80 ±0.49 37* Ag—Pd 0.90 ±0.60 38 Ni—Cr 0.007 ±0.31 39 Ni—Cr0.10 ±0.35 40 Ni—Cr 0.30 ±0.38 41 Ni—Cr 0.50 ±0.40 42 Ni—Cr 0.80 ±0.5043* Ni—Cr 0.90 ±0.59Note:Samples marked with an asterisk (*) in the table are comparativeexamples.

It will be understood from the results set forth in Table IV thatwhether the resistive heating element is made of tungsten as in theEmbodiment 1 or is made of Mo, Pt, Ag—Pd, or Ni—Cr as here, favorablewafer surface temperature uniformity while a wafer is being heated canbe had by making the difference between a maximum outer diameter andminimum outer diameter along the thickness be 0.8% or less of theaverage outer diameter of the wafer-support side.

Embodiment 5

A sintering additive, a binder, a dispersing agent and alcohol wereadded to an aluminum nitride (AlN) powder and kneaded into a paste,which then underwent doctor-blading formation to yield multiple greensheets approximately 0.5 mm thick.

Next the green sheets were dried for 5 hours at 80° C. A paste oftungsten powder and sintering additive kneaded together with a binderwas then print-coated on the surface of single plies of the green sheetsto form a layer of a resistive heating element in a predeterminedcircuit pattern. Second plies of the green sheets were likewise driedand the same tungsten paste was print-coated onto a surface thereof toform a plasma electrode layer. These two plies of green sheets eachhaving a conductive layer were then laminated in a total 50 plies withgreen sheets that were similarly dried but that were not printed with aconductive layer, and the laminates were united by heating them at atemperature of 140° C. while applying a pressure of 70 kg/cm².

The resulting laminates were degreased for 5 hours at 600° C. in anon-oxidizing atmosphere, then hot-pressed at 1800° C. while applyingpressure of 100 to 150 kg/cm², thereby producing 3-mm thick AlN plates.These plates were then cut to form 380-mm diameter disks. The peripheryof each disk was then polished to a 300 mm diameter, producing ceramicsusceptors of the structure in FIG. 2, having an internal resistiveheating element and plasma electrode made of tungsten.

The circumferential surface of the ceramic susceptor obtained was thenpolished to yield a predetermined outer-diameter fluctuation parameterD_(p) at normal temperature. Having the configuration represented inFIG. 2, sample ceramic susceptors in which the outer-diameterfluctuation parameter D_(p) was varied as indicated in Table V wereprepared as just described.

The temperature of each sample susceptor produced in this way was thenraised to 500° C. by flowing a current at a voltage of 200 V into theresistive heating element through two electrodes formed on the surfaceof the susceptor opposite the wafer-support side. At that time thetemperature distribution in the surface of a 0.8-mm thick, 300-mmdiameter silicon wafer placed on the wafer-support side of the ceramicsusceptor was measured to find the temperature uniformity. The resultsobtained for each sample are collectively set forth in Table V. TABLE VOuter-diameter fluctuation Temperature uniformity (%) Sample parameterD_(p) (%) of wafer surface at 500° C. 44 0.007 ±0.31 45 0.10 ±0.36 460.30 ±0.39 47 0.50 ±0.43 48 0.80 ±0.49 49* 0.90 ±0.59Note:Samples marked with an asterisk (*) in the table are comparativeexamples.

As will be understood from the results set forth in Table V, also with aceramic susceptor having an internal resistive heating element andplasma electrode favorable wafer-surface temperature uniformity when awafer is being heated can be gained by making the difference between amaximum outer diameter and minimum outer diameter along the thickness be0.8% or less of the average outer diameter of the susceptorwafer-support side.

INDUSTRIAL APPLICABILITY

In accordance with the present invention, keeping outer-diameterfluctuation along the thickness of a ceramic susceptor when at normaltemperature affords for semiconductor manufacturing equipment a ceramicsusceptor whereby wafer-surface temperature uniformity during heatingoperations is enhanced.

1. For heating operations in semiconductor manufacturing equipment, aceramic susceptor comprising: a ceramic substrate defining awafer-support side and being processed so that when the susceptor is notheating, along the susceptor thickness the difference between themaximum outer diameter and the minimum outer diameter in an arbitraryplane is 0.8% or less of the average outer diameter along the susceptorwafer-support side; and a resistive heating element provided either on asurface of or inside said ceramic substrate.
 2. A ceramic susceptor forsemiconductor manufacturing equipment as set forth in claim 1, whereinthe ceramic substrate is made of at least one ceramic selected fromaluminum nitride, silicon nitride, aluminum oxynitride, and siliconcarbide.
 3. A ceramic susceptor for semiconductor manufacturingequipment as set forth in claim 1, wherein the resistive heating elementis made from at least one metal selected from tungsten, molybdenum,platinum, palladium, silver, nickel, and chrome.
 4. A ceramic susceptorfor semiconductor manufacturing equipment as set forth in claim 1,wherein a plasma electrode is further disposed on a surface of or insidethe ceramic substrate.
 5. A ceramic susceptor for semiconductormanufacturing equipment as set forth in claim 2, wherein the resistiveheating element is made from at least one metal selected from tungsten,molybdenum, platinum, palladium, silver, nickel, and chrome.
 6. Aceramic susceptor for semiconductor manufacturing equipment as set forthin claim 2, wherein a plasma electrode is further disposed on a surfaceof or inside the ceramic substrate.
 7. A ceramic susceptor forsemiconductor manufacturing equipment as set forth in claim 3, wherein aplasma electrode is further disposed on a surface of or inside theceramic substrate.
 8. A ceramic susceptor for semiconductormanufacturing equipment as set forth in claim 5, wherein a plasmaelectrode is further disposed on a surface of or inside the ceramicsubstrate.